RF MOSFET Transistors N-Ch Radio Freq 1A 3W 20V VDSS
Products specifications
Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 3 A |
Output Power | 7 W |
Technology | Si |
Transistor Polarity | N-Channel |
Gain | 11.4 dB |
Product Type | RF MOSFET Transistors |
Packaging | Cut Tape, MouseReel, Reel |