MOSFET MOSFET N-Ch 200V 30A Rdson 0.052 Ohm
Products specifications
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 200 V |
Configuration | Single |
Pd - Power Dissipation | 150 W |
Channel Mode | Enhancement |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Mounting Style | Through Hole |
Rds On - Drain-Source Resistance | 52 mOhms |
Id - Continuous Drain Current | 30 A |
Vgs - Gate-Source Voltage | 20 V |