MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm
Products specifications
Pd - Power Dissipation | 90 W |
Vgs - Gate-Source Voltage | 30 V |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 8.5 A |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 1.25 Ohms |
Vds - Drain-Source Breakdown Voltage | 900 V |
Maximum Operating Temperature | + 150 C |
Technology | Si |
Configuration | Single |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Minimum Operating Temperature | - 55 C |