MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V
Products specifications
Channel Mode | Enhancement |
Pd - Power Dissipation | 1.5 W |
Number of Channels | 1 Channel |
Technology | Si |
Id - Continuous Drain Current | 1 A |
Vgs - Gate-Source Voltage | 20 V |
Configuration | Single |
Rds On - Drain-Source Resistance | 730 mOhms |
Transistor Polarity | P-Channel |
Packaging | Reel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |