MOSFET P-Ch Vth -0.5 -1.5V RDS 2.4Ohm 200mW
Lead Time: 0 Days
Products specifications
Configuration | Single |
Vgs - Gate-Source Voltage | 2.5 V |
Pd - Power Dissipation | 200 mW |
Vds - Drain-Source Breakdown Voltage | 30 V |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Technology | Si |
Packaging | Cut Tape, MouseReel, Reel |
Vgs th - Gate-Source Threshold Voltage | 500 mV |
Id - Continuous Drain Current | 200 mA |
Rds On - Drain-Source Resistance | 4 Ohms |
Transistor Polarity | P-Channel |
Maximum Operating Temperature | + 150 C |