MOSFETs P-Ch Sm Sig FET Id -0.2A -60V 20V
Lead Time: 0 Days
Products specifications
Vds - Drain-Source Breakdown Voltage | 60 V |
Pd - Power Dissipation | 200 mW |
Transistor Polarity | P-Channel |
Technology | Si |
Packaging | Cut Tape, MouseReel, Reel |
Vgs th - Gate-Source Threshold Voltage | 3.5 V |
Id - Continuous Drain Current | 200 mA |
Rds On - Drain-Source Resistance | 1.3 Ohms |
Configuration | Single |