MOSFET 10V Drive Nch MOSFET
Products specifications
Number of Channels | 1 Channel |
Pd - Power Dissipation | 40 W |
Mounting Style | Through Hole |
Channel Mode | Enhancement |
Qg - Gate Charge | 40 nC |
Maximum Operating Temperature | + 150 C |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 500 V |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 520 mOhms |
Configuration | Single |
Packaging | Cut Tape, Reel |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 30 V |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Id - Continuous Drain Current | 13 A |