MOSFET 10V Drive Nch MOSFET
Products specifications
Vds - Drain-Source Breakdown Voltage | 500 V |
Configuration | Single |
Pd - Power Dissipation | 40 W |
Packaging | Cut Tape, Reel |
Technology | Si |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Vgs - Gate-Source Voltage | 30 V |
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 850 mOhms |
Minimum Operating Temperature | - 55 C |
Qg - Gate Charge | 23 nC |
Transistor Polarity | N-Channel |
Mounting Style | Through Hole |
Id - Continuous Drain Current | 8 A |
Number of Channels | 1 Channel |