MOSFET 10V Drive Nch MOSFET
Products specifications
Vds - Drain-Source Breakdown Voltage | 600 V |
Qg - Gate Charge | 20 nC |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Packaging | Cut Tape, MouseReel, Reel |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 630 mA |
Technology | Si |
Vgs - Gate-Source Voltage | 30 V |
Rds On - Drain-Source Resistance | 4.4 Ohms |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |
Pd - Power Dissipation | 2 W |