UT6MA3TCR

MOSFETs 20V Nch+Pch Si MOSFET
Lead Time: 155 Days

SKU: UT6MA3TCR

Availability: 1200 in stock

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R 16.71

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MOSFETs 20V Nch+Pch Si MOSFET
Lead Time: 155 Days

Products specifications

Technology	Si
Channel Mode	Enhancement
Pd - Power Dissipation	2 W
Vds - Drain-Source Breakdown Voltage	20 V
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	30 mOhms, 42 mOhms
Qg - Gate Charge	4 nC, 6.5 nC
Vgs - Gate-Source Voltage	8 V
Number of Channels	2 Channel
Transistor Polarity	N-Channel, P-Channel
Vgs th - Gate-Source Threshold Voltage	500 mV, 1.5 V
Configuration	Dual
Id - Continuous Drain Current	5.5 A, 5 A

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Products specifications

Technology	Si
Channel Mode	Enhancement
Pd - Power Dissipation	2 W
Vds - Drain-Source Breakdown Voltage	20 V
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	30 mOhms, 42 mOhms
Qg - Gate Charge	4 nC, 6.5 nC
Vgs - Gate-Source Voltage	8 V
Number of Channels	2 Channel
Transistor Polarity	N-Channel, P-Channel
Vgs th - Gate-Source Threshold Voltage	500 mV, 1.5 V
Configuration	Dual
Id - Continuous Drain Current	5.5 A, 5 A