MOSFETs -30V Pch+Pch Si MOSFET
Lead Time: 112 Days
Products specifications
Configuration | Dual |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Pd - Power Dissipation | 2 W |
Qg - Gate Charge | 6.7 nC, 6.7 nC |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Packaging | Cut Tape, MouseReel, Reel |
Minimum Operating Temperature | - 55 C |
Transistor Polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 4 A |
Vgs - Gate-Source Voltage | 20 V |
Number of Channels | 2 Channel |
Rds On - Drain-Source Resistance | 55 mOhms, 55 mOhms |
Technology | Si |