US6M2TR

MOSFETs N+P 20V 1.5A/1A
Lead Time: 112 Days

SKU: US6M2TR

Availability: 13274 in stock

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R 10.36

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R 5.82

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MOSFETs N+P 20V 1.5A/1A
Lead Time: 112 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	700 mV, 500 mV
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Technology	Si
Pd - Power Dissipation	1 W
Number of Channels	2 Channel
Qg - Gate Charge	1.6 nC, 2.1 nC
Configuration	Dual
Vgs - Gate-Source Voltage	4.5 V
Vds - Drain-Source Breakdown Voltage	20 V, 30 V
Rds On - Drain-Source Resistance	240 mOhms, 390 mOhms
Transistor Polarity	N-Channel, P-Channel
Id - Continuous Drain Current	1 A, 1.5 A
Packaging	Cut Tape, MouseReel, Reel

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Products specifications

Vgs th - Gate-Source Threshold Voltage	700 mV, 500 mV
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Technology	Si
Pd - Power Dissipation	1 W
Number of Channels	2 Channel
Qg - Gate Charge	1.6 nC, 2.1 nC
Configuration	Dual
Vgs - Gate-Source Voltage	4.5 V
Vds - Drain-Source Breakdown Voltage	20 V, 30 V
Rds On - Drain-Source Resistance	240 mOhms, 390 mOhms
Transistor Polarity	N-Channel, P-Channel
Id - Continuous Drain Current	1 A, 1.5 A
Packaging	Cut Tape, MouseReel, Reel