US6M2GTR

MOSFETs 2.5v Nch+Pch 6pin TUMT6; w/G-S Diode
Lead Time: 112 Days

SKU: US6M2GTR

Availability: 11868 in stock

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R 16.79

R 14.91

R 10.17

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R 7.25

R 5.82

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MOSFETs 2.5v Nch+Pch 6pin TUMT6; w/G-S Diode
Lead Time: 112 Days

Products specifications

Channel Mode	Enhancement
Configuration	Dual
Vgs - Gate-Source Voltage	4.5 V
Vds - Drain-Source Breakdown Voltage	30 V, 20 V
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel, P-Channel
Rds On - Drain-Source Resistance	170 mOhms, 280 mOhms
Packaging	Cut Tape, MouseReel, Reel
Technology	Si
Id - Continuous Drain Current	1.5 A, 1 A
Qg - Gate Charge	1.6 nC, 2.1 nC
Pd - Power Dissipation	1 W
Vgs th - Gate-Source Threshold Voltage	1.5 V, 2 V
Number of Channels	2 Channel

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Products specifications

Channel Mode	Enhancement
Configuration	Dual
Vgs - Gate-Source Voltage	4.5 V
Vds - Drain-Source Breakdown Voltage	30 V, 20 V
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel, P-Channel
Rds On - Drain-Source Resistance	170 mOhms, 280 mOhms
Packaging	Cut Tape, MouseReel, Reel
Technology	Si
Id - Continuous Drain Current	1.5 A, 1 A
Qg - Gate Charge	1.6 nC, 2.1 nC
Pd - Power Dissipation	1 W
Vgs th - Gate-Source Threshold Voltage	1.5 V, 2 V
Number of Channels	2 Channel