TT8J3TR

MOSFETs 4V Drive Pch+Pc Si MOSFET
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SKU: TT8J3TR

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MOSFETs 4V Drive Pch+Pc Si MOSFET
Lead Time: 0 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	4.8 nC, 4.8 nC
Rds On - Drain-Source Resistance	65 mOhms, 65 mOhms
Id - Continuous Drain Current	2.5 A
Configuration	Dual
Channel Mode	Enhancement
Pd - Power Dissipation	1.25 W
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Packaging	Cut Tape, MouseReel, Reel
Number of Channels	2 Channel
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	20 V
Technology	Si

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Products specifications

Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	4.8 nC, 4.8 nC
Rds On - Drain-Source Resistance	65 mOhms, 65 mOhms
Id - Continuous Drain Current	2.5 A
Configuration	Dual
Channel Mode	Enhancement
Pd - Power Dissipation	1.25 W
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Packaging	Cut Tape, MouseReel, Reel
Number of Channels	2 Channel
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	20 V
Technology	Si