MOSFETs Med Pwr, Sw MOSFET N Chan, 20V, 4A
Lead Time: 112 Days
Products specifications
Id - Continuous Drain Current | 4 A |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 20 V |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 1 W |
Packaging | Cut Tape, MouseReel, Reel |
Configuration | Single |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Technology | Si |
Rds On - Drain-Source Resistance | 25 mOhms |
Qg - Gate Charge | 8 nC |
Vgs - Gate-Source Voltage | 10 V |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 1.3 V |