MOSFET N-CH 30V .1A SOT416
Products specifications
Rds On - Drain-Source Resistance | 8 Ohms |
Vgs - Gate-Source Voltage | 4 V |
Vds - Drain-Source Breakdown Voltage | 30 V |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 150 mW |
Id - Continuous Drain Current | 100 mA |
Configuration | Single |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 800 mV |
Maximum Operating Temperature | + 150 C |
Transistor Polarity | N-Channel |
Packaging | Cut Tape, MouseReel, Reel |
Technology | Si |