MMBT3906-G

Bipolar Transistors - BJT VCEO=40V IC=100mA
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SKU: MMBT3906-G

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Bipolar Transistors - BJT VCEO=40V IC=100mA
Lead Time: 0 Days

Products specifications

Configuration	Single
Series	MMBT3906
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Emitter- Base Voltage VEBO	- 5 V
Collector- Emitter Voltage VCEO Max	- 40 V
Gain Bandwidth Product fT	300 MHz
Maximum DC Collector Current	- 0.2 A
Transistor Polarity	PNP
Collector-Emitter Saturation Voltage	- 0.4 V
Technology	Si
Collector- Base Voltage VCBO	- 40 V

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Products specifications

Configuration	Single
Series	MMBT3906
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Emitter- Base Voltage VEBO	- 5 V
Collector- Emitter Voltage VCEO Max	- 40 V
Gain Bandwidth Product fT	300 MHz
Maximum DC Collector Current	- 0.2 A
Transistor Polarity	PNP
Collector-Emitter Saturation Voltage	- 0.4 V
Technology	Si
Collector- Base Voltage VCBO	- 40 V