IGBT Modules 75 Amps 600V
Products specifications
Gate-Emitter Leakage Current | 200 nA |
Continuous Collector Current at 25 C | 90 A |
Configuration | Quad |
Packaging | Bulk |
Collector-Emitter Saturation Voltage | 600 V |
Pd - Power Dissipation | 280 W |
Product | IGBT Silicon Modules |
Maximum Operating Temperature | + 150 C |
Collector- Emitter Voltage VCEO Max | 600 V |
Minimum Operating Temperature | - 40 C |