IGBT Modules 100 Amps 1200V
Products specifications
Product | IGBT Silicon Modules |
Collector-Emitter Saturation Voltage | 1.2 kV |
Minimum Operating Temperature | - 40 C |
Continuous Collector Current at 25 C | 125 A |
Pd - Power Dissipation | 640 W |
Gate-Emitter Leakage Current | 600 nA |
Maximum Operating Temperature | + 125 C |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Packaging | Bulk |