IGBT Modules IGBT Module H Bridge
Products specifications
Continuous Collector Current at 25 C | 120 A |
Gate-Emitter Leakage Current | 500 nA |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 125 C |
Collector-Emitter Saturation Voltage | 1.8 V |
Pd - Power Dissipation | 390 W |
Packaging | Bulk |
Configuration | Half Bridge |