IGBT Modules XPT IGBT Module
Products specifications
Continuous Collector Current at 25 C | 465 A |
Product | IGBT Silicon Modules |
Gate-Emitter Leakage Current | 0.3 mA |
Pd - Power Dissipation | 1.5 kW |
Maximum Operating Temperature | + 125 C |
Packaging | Bulk |
Collector- Emitter Voltage VCEO Max | 1200 V |
Configuration | IGBT-Inverter |
Minimum Operating Temperature | - 40 C |
Collector-Emitter Saturation Voltage | 1.8 V |