IGBT Modules IGBT Module H Bridge
Products specifications
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Gate-Emitter Leakage Current | 200 nA |
Minimum Operating Temperature | - 40 C |
Configuration | Half Bridge |
Pd - Power Dissipation | 630 W |
Maximum Operating Temperature | + 125 C |
Collector-Emitter Saturation Voltage | 1.8 V |
Packaging | Bulk |
Continuous Collector Current at 25 C | 183 A |