IGBT Modules 550 Amps 1200V
Products specifications
Gate-Emitter Leakage Current | 1.6 uA |
Continuous Collector Current at 25 C | 670 A |
Product | IGBT Silicon Modules |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Configuration | Single |
Packaging | Bulk |
Maximum Operating Temperature | + 150 C |
Collector-Emitter Saturation Voltage | 2.3 V |
Minimum Operating Temperature | - 40 C |
Pd - Power Dissipation | 2.75 kW |