IGBT Modules 300 Amps 1200V
Products specifications
Continuous Collector Current at 25 C | 330 A |
Gate-Emitter Leakage Current | 800 nA |
Product | IGBT Silicon Modules |
Minimum Operating Temperature | - 40 C |
Packaging | Bulk |
Pd - Power Dissipation | 1.38 kW |
Collector-Emitter Saturation Voltage | 1.2 kV |
Configuration | Single |
Maximum Operating Temperature | + 150 C |
Collector- Emitter Voltage VCEO Max | 1.2 kV |