IGBT Modules 150 Amps 1200V
Products specifications
Continuous Collector Current at 25 C | 180 A |
Packaging | Bulk |
Minimum Operating Temperature | - 40 C |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Pd - Power Dissipation | 760 W |
Gate-Emitter Leakage Current | 400 nA |
Product | IGBT Silicon Modules |
Collector-Emitter Saturation Voltage | 1.2 kV |
Maximum Operating Temperature | + 150 C |
Configuration | Single |