IGBT Modules 100 Amps 1200V
Lead Time: 0 Days
Products specifications
Product | IGBT Silicon Modules |
Pd - Power Dissipation | 560 W |
Continuous Collector Current at 25 C | 135 A |
Gate-Emitter Leakage Current | 300 nA |
Packaging | Bulk |
Minimum Operating Temperature | - 40 C |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Maximum Operating Temperature | + 125 C |
Configuration | Single |
Collector-Emitter Saturation Voltage | 1.2 kV |