RF MOSFET Transistors DE-475 21A 1000V N Channel MOSFET
Products specifications
Id - Continuous Drain Current | 24 A |
Vds - Drain-Source Breakdown Voltage | 1000 V |
Technology | Si |
Rds On - Drain-Source Resistance | 450 mOhms |
Packaging | Tube |
Output Power | 1.8 kW |
Minimum Operating Temperature | - 55 C |
Product Type | RF MOSFET Transistors |
Maximum Operating Temperature | + 175 C |
Transistor Polarity | N-Channel |