RF MOSFET Transistors DE-275 1000V 6A N Channel MOSFET
Products specifications
Rds On - Drain-Source Resistance | 1.5 Ohms |
Output Power | 590 W |
Transistor Polarity | N-Channel |
Product Type | RF MOSFET Transistors |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Packaging | Tube |
Maximum Operating Temperature | + 175 C |
Id - Continuous Drain Current | 8 A |
Vds - Drain-Source Breakdown Voltage | 1000 V |