RF Bipolar Transistors RF BIP TRANSISTORS
Lead Time: 28 Days
Products specifications
Manufacturer | Infineon |
Product Category | Bipolar Transistors - BJT |
RoHS | Details |
Mounting Style | SMD/SMT |
Package/Case | SOT-89-4 |
Pd - Power Dissipation | 1 W |
Packaging | Cut Tape, MouseReel, Reel |
DC Current Gain hFE Max | 140 |
Height | 1.5 mm |
Length | 4.5 mm |
Technology | Si |
Width | 2.5 mm |
Brand | Infineon Technologies |
Continuous Collector Current | 120 mA |
DC Collector/Base Gain hFE Min | 70 |
Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1000 |
Subcategory | Transistors |
Part # Aliases | BFQ 19S H6327 SP001125294 |
Unit Weight | 130.500 mg |
Maximum Operating Temperature | + 150 C |
Collector- Emitter Voltage VCEO Max | 15 V |
Minimum Operating Temperature | - 65 C |
Collector- Base Voltage VCBO | 20 V |
Emitter- Base Voltage VEBO | 3 V |
Transistor Polarity | NPN |
Configuration | Single |
Gain Bandwidth Product fT | 5.5 GHz |