Phototransistors PHOTOTRANSISTOR
Lead Time: 0 Days
Products specifications
Rise Time | 14 us |
Maximum On-State Collector Current | 50 mA |
Pd - Power Dissipation | 200 mW |
Product | Phototransistors |
Minimum Operating Temperature | - 40 C |
Collector- Emitter Voltage VCEO Max | 70 V |
Collector-Emitter Saturation Voltage | 150 mV |
Mounting Style | Through Hole |
Peak Wavelength | 870 nm |
Dark Current | 200 nA |
Collector-Emitter Breakdown Voltage | 70 V |
Operating Supply Voltage | - |
Fall Time | 14 us |
Maximum Operating Temperature | + 100 C |