Phototransistors PHOTOTRANSISTOR
Products specifications
Rise Time | 7 us |
Maximum Operating Temperature | + 85 C |
Mounting Style | Through Hole |
Peak Wavelength | 920 nm |
Collector-Emitter Saturation Voltage | 140 mV |
Collector- Emitter Voltage VCEO Max | 35 V |
Pd - Power Dissipation | 150 mW |
Minimum Operating Temperature | - 40 C |
Dark Current | 50 nA |
Fall Time | 9 us |
Maximum On-State Collector Current | 50 mA |
Collector-Emitter Breakdown Voltage | 35 V |
Product | Phototransistors |