Phototransistors PHOTOTRANSISTOR
Lead Time: 0 Days
Products specifications
Fall Time | 8 us, 9 us |
Series | + 100 C |
Product | Phototransistors |
Maximum On-State Collector Current | 15 mA, - |
Collector-Emitter Breakdown Voltage | 35 V |
Rise Time | 8 us, 9 us, 15 mA |
Dark Current | 15 mA, 200 mV |
Operating Supply Voltage | -, 860 nm |
Mounting Style | Through Hole, T-1 |
Collector-Emitter Saturation Voltage | 200 mV, 35 V |
Minimum Operating Temperature | - 40 C, 165 mW |
Pd - Power Dissipation | 8 us, 9 us, 165 mW |
Collector- Emitter Voltage VCEO Max | 35 V, 15 mA |
Maximum Operating Temperature | + 100 C, - 40 C |
Peak Wavelength | Through Hole, 860 nm |