Phototransistors PHOTOTRANSISTOR
Lead Time: 0 Days
Products specifications
Maximum Operating Temperature | - 40 C, + 80 C |
Collector- Emitter Voltage VCEO Max | 50 mA, 32 V |
Collector-Emitter Saturation Voltage | 150 mV, 32 V |
Rise Time | 50 nA, - |
Operating Supply Voltage | 850 nm, - |
Peak Wavelength | Through Hole, 850 nm |
Maximum On-State Collector Current | -, 50 mA |
Series | + 80 C |
Product | Phototransistors |
Collector-Emitter Breakdown Voltage | 32 V |
Pd - Power Dissipation | 70 mW, - |
Minimum Operating Temperature | - 40 C, 70 mW |
Dark Current | 150 mV, 50 nA |
Mounting Style | -, Through Hole |
Fall Time | - |