Phototransistors PHOTOTRANSISTOR
Lead Time: 0 Days
Products specifications
Collector-Emitter Breakdown Voltage | 35 V |
Maximum On-State Collector Current | 50 mA |
Dark Current | 50 nA |
Rise Time | 10 us |
Maximum Operating Temperature | + 100 C |
Peak Wavelength | 880 nm |
Pd - Power Dissipation | 200 mW |
Fall Time | 10 us |
Minimum Operating Temperature | - 40 C |
Mounting Style | Through Hole |
Product | Phototransistors |
Collector- Emitter Voltage VCEO Max | 35 V |
Collector-Emitter Saturation Voltage | 150 mV |