Phototransistors PHOTOTRANSISTOR
Products specifications
Maximum Operating Temperature | + 100 C |
Minimum Operating Temperature | - 40 C |
Collector-Emitter Breakdown Voltage | 30 V |
Maximum On-State Collector Current | 50 mA |
Rise Time | 10 us |
Peak Wavelength | 880 nm |
Fall Time | 10 us |
Pd - Power Dissipation | 100 mW |
Mounting Style | Through Hole |
Dark Current | 50 nA |
Product | Phototransistors |
Collector- Emitter Voltage VCEO Max | 30 V |
Collector-Emitter Saturation Voltage | 150 mV |