Phototransistors PHOTODIODE
Lead Time: 16 Days
Products specifications
Dark Current | 50 nA |
Minimum Operating Temperature | - 40 C |
Collector-Emitter Breakdown Voltage | 35 V |
Collector-Emitter Saturation Voltage | 160 mV |
Mounting Style | Through Hole |
Collector- Emitter Voltage VCEO Max | 35 V |
Maximum On-State Collector Current | 100 mA |
Rise Time | 9 us |
Fall Time | 9 us |
Product | Phototransistors |
Pd - Power Dissipation | 200 mW |
Maximum Operating Temperature | + 125 C |
Peak Wavelength | 830 nm |