Phototransistors PHOTOTRANSISTOR
Lead Time: 0 Days
Products specifications
Peak Wavelength | 850 nm, Through Hole |
Rise Time | 6 us, 1 nA |
Maximum Operating Temperature | + 80 C, - 40 C |
Series | + 80 C |
Operating Supply Voltage | 850 nm, - |
Mounting Style | Miniature Array, Through Hole |
Collector-Emitter Breakdown Voltage | 35 V |
Maximum On-State Collector Current | -, 50 mA |
Dark Current | 1 nA, 150 mW |
Product | Phototransistors |
Minimum Operating Temperature | 90 mW, - 40 C |
Collector-Emitter Saturation Voltage | 35 V, 150 mW |
Collector- Emitter Voltage VCEO Max | 50 mA, 35 V |
Pd - Power Dissipation | 6 us, 90 mW |
Fall Time | 6 us |