Phototransistors PHOTOTRANSISTOR
Products specifications
Collector-Emitter Saturation Voltage | 150 mW |
Pd - Power Dissipation | 90 mW |
Fall Time | 6 us |
Product | Phototransistors |
Rise Time | 6 us |
Maximum Operating Temperature | + 80 C |
Mounting Style | Through Hole |
Collector-Emitter Breakdown Voltage | 35 V |
Dark Current | 1 nA |
Operating Supply Voltage | - |
Minimum Operating Temperature | - 40 C |
Collector- Emitter Voltage VCEO Max | 35 V |
Maximum On-State Collector Current | 50 mA |
Peak Wavelength | 850 nm |