BPX 43-5

Phototransistors PHOTODIODE

SKU: BPX 43-5

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R 144.60

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Phototransistors PHOTODIODE

Products specifications

Maximum On-State Collector Current	50 mA
Operating Supply Voltage	-
Collector-Emitter Saturation Voltage	260 mV
Fall Time	18 us
Collector-Emitter Breakdown Voltage	50 V
Mounting Style	Through Hole
Rise Time	18 us
Pd - Power Dissipation	220 mW
Dark Current	20 nA
Peak Wavelength	880 nm
Minimum Operating Temperature	- 40 C
Collector- Emitter Voltage VCEO Max	50 V
Maximum Operating Temperature	+ 125 C
Product	Phototransistors

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Products specifications

Maximum On-State Collector Current	50 mA
Operating Supply Voltage	-
Collector-Emitter Saturation Voltage	260 mV
Fall Time	18 us
Collector-Emitter Breakdown Voltage	50 V
Mounting Style	Through Hole
Rise Time	18 us
Pd - Power Dissipation	220 mW
Dark Current	20 nA
Peak Wavelength	880 nm
Minimum Operating Temperature	- 40 C
Collector- Emitter Voltage VCEO Max	50 V
Maximum Operating Temperature	+ 125 C
Product	Phototransistors