Phototransistors PHOTODIODE
Lead Time: 0 Days
Products specifications
Collector-Emitter Breakdown Voltage | 50 V |
Pd - Power Dissipation | 220 mW |
Product | Phototransistors |
Minimum Operating Temperature | - 40 C |
Rise Time | 18 us |
Dark Current | 20 nA |
Peak Wavelength | 880 nm |
Mounting Style | Through Hole |
Collector- Emitter Voltage VCEO Max | 50 V |
Maximum On-State Collector Current | 50 mA |
Operating Supply Voltage | - |
Collector-Emitter Saturation Voltage | 260 mV |
Maximum Operating Temperature | + 125 C |
Fall Time | 18 us |