Phototransistors PHOTODIODE
Lead Time: 0 Days
Products specifications
Peak Wavelength | 880 nm |
Product | Phototransistors |
Rise Time | 15 us |
Collector-Emitter Breakdown Voltage | 50 V |
Minimum Operating Temperature | - 40 C |
Collector-Emitter Saturation Voltage | 240 mV |
Collector- Emitter Voltage VCEO Max | 50 V |
Operating Supply Voltage | - |
Dark Current | 20 nA |
Maximum Operating Temperature | + 125 C |
Pd - Power Dissipation | 220 mW |
Fall Time | 15 us |
Maximum On-State Collector Current | 50 mA |
Mounting Style | Through Hole |