Phototransistors PHOTODIODE
Lead Time: 0 Days
Products specifications
Peak Wavelength | 880 nm |
Collector-Emitter Breakdown Voltage | 50 V |
Rise Time | 9 us, 12 us |
Dark Current | 100 nA |
Maximum On-State Collector Current | 50 mA |
Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 125 C |
Mounting Style | Through Hole |
Pd - Power Dissipation | 220 mW |
Collector- Emitter Voltage VCEO Max | 50 V |
Collector-Emitter Saturation Voltage | 200 mV |
Product | Phototransistors |
Fall Time | 9 us, 12 us |