RF Bipolar Transistors 3.6V, 1W RF Power Transistors for 900MHz
Products specifications
Technology | Si |
Continuous Collector Current | 200 mA |
Product Type | RF Bipolar Transistors |
Maximum Operating Temperature | + 85 C |
Transistor Type | Bipolar Power |
Packaging | Tube |
Collector- Emitter Voltage VCEO Max | 17 V |
Configuration | Single |
Transistor Polarity | NPN |
Series | MAX2601 |
Minimum Operating Temperature | - 40 C |
Emitter- Base Voltage VEBO | 2.3 V |