MOSFETs 100V 12Ohm
Lead Time: 63 Days
Products specifications
Vds - Drain-Source Breakdown Voltage | 100 V |
Pd - Power Dissipation | 360 mW |
Maximum Operating Temperature | + 150 C |
Transistor Polarity | P-Channel |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Number of Channels | 1 Channel |
Vgs - Gate-Source Voltage | 10 V |
Minimum Operating Temperature | - 55 C |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 120 mA |
Configuration | Single |
Rds On - Drain-Source Resistance | 12 Ohms |
Packaging | Cut Tape, MouseReel, Reel |