MOSFET N-CH Enhancmnt Mode MOSFET
Products specifications
Rds On - Drain-Source Resistance | 85 Ohms |
Id - Continuous Drain Current | 54 mA |
Maximum Operating Temperature | + 150 C |
Number of Channels | 1 Channel |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 20 V |
Configuration | Single |
Packaging | Cut Tape, Reel |
Channel Mode | Enhancement |
Mounting Style | Through Hole |
Vds - Drain-Source Breakdown Voltage | 500 V |
Transistor Polarity | P-Channel |
Technology | Si |
Pd - Power Dissipation | 1 W |