MOSFET N-CH Enhancmnt Mode MOSFET
Products specifications
Channel Mode | Enhancement |
Technology | Si |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 1 W |
Vgs - Gate-Source Voltage | 20 V |
Vds - Drain-Source Breakdown Voltage | 50 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 1.2 A |
Rds On - Drain-Source Resistance | 450 mOhms |
Number of Channels | 1 Channel |
Configuration | Single |
Packaging | Cut Tape, Reel |