MOSFET N-CH Enhancmnt Mode MOSFET
Products specifications
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 240 V |
Mounting Style | Through Hole |
Packaging | Cut Tape, Reel |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 1.5 Ohms |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Configuration | Single |
Id - Continuous Drain Current | 540 mA |