MOSFET 60V 4Ohm
Lead Time: 49 Days
Products specifications
Packaging | Bulk |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 60 V |
Pd - Power Dissipation | 1 W |
Configuration | Single |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 4 Ohms |
Id - Continuous Drain Current | 300 mA |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 20 V |