MOSFET N-CH Enhancmnt Mode MOSFET
Products specifications
Pd - Power Dissipation | 1 W |
Mounting Style | Through Hole |
Id - Continuous Drain Current | 230 mA |
Configuration | Single |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 120 V |
Technology | Si |
Vgs - Gate-Source Voltage | 30 V |
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Packaging | Cut Tape, Reel |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 10 Ohms |