MOSFETs 30V 1.2Ohm
Lead Time: 77 Days
Products specifications
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 800 mV |
Channel Mode | Enhancement |
Pd - Power Dissipation | 1 W |
Rds On - Drain-Source Resistance | 1.2 Ohms |
Packaging | Bulk |
Vds - Drain-Source Breakdown Voltage | 30 V |
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Vgs - Gate-Source Voltage | 10 V |
Maximum Operating Temperature | + 150 C |
Number of Channels | 1 Channel |
Mounting Style | Through Hole |
Id - Continuous Drain Current | 640 mA |
Transistor Polarity | N-Channel |